Si apd array s8550 pdf

Toshiba transistor silicon npn epitaxial type pct process. It has higher sn than pin photodiodes and is widely used in optical rangefinders, spatial light transmission, scintillation detectors, etc. In our experimental study we used the hamamatsu apd array s8550 fig. Uvenhanced apdarray the apds described here hamamatsu s85500001x,0002x were developed based on the technology of the s8664 apd series reversetype. The apd detector elements have a peak quantum efficiency of 80% near 900 nm and have at least 40% quantum efficiency over the 400nm to nm wavelength range.

Hamamatsu, alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Toshiba transistor silicon npn epitaxial type pct process 2sc1815 audio frequency general purpose amplifier applications driver stage amplifier applications high voltage and high current. Thorlabs ingaas avalanche photodetectors apds are designed to offer increased sensitivity and lower noise compared to standard pin detectors, making them ideal for applications with low optical power levels. A lenslet array located at the focal plane will produce an array of pupil images. A 1 cm x 1 cm in ga asin al as avalanche photodiode array.

Featureshigh sensitivity and low noise in short wavelength regionlow terminal capacitanceoptimized for blue light detectionuniform gain and low crosstalk variation. Hamamatsu also provides compact apd modules that contain an. Performance of the most recent avalanche photodiodes for future x. A multifunctional fiber laser lidar for earth science. C page 2 of 2 any changes of specification will not. The avalanche effect of these photodiodes makes them well suited for the detection of extremely weak light intensities. Pdf application of hamamatsu s8550 apd array to the.

The apd described herein available from ldi is a mesa structure ingaas apd. S8550 is an apd avalanche photodiode array designed for short wavelength detection, featuring low noise and low terminal capacitance. Apd structure the apd structure design we proposed in 1994 used silicon planar technology to create small generation volume apd arrays. S8550 datasheet, s8550 pdf, s8550 data sheet, s8550 manual, s8550 pdf, s8550, datenblatt, electronics s8550, alldatasheet, free, datasheet, datasheets, data sheet, datas sheets, databook, free datasheet. First sensor apd array data sheet first sensor apd array data sheet part description 16aa0. Outputs datasheet si5351abgt i2c xtal only blank 3 si5351abc b si5351abgm1 i2c xtal only blank 4 si5351abc b si5351bbgm1 i2c xtal andor voltage blank 4 si5351abc b si5351cbgm1 i2c xtal andor clkin blank 4 si5351abc b. Vceo 50 v min, ic 150 ma max excellent hfe linearity. The development and performance of uvenhanced apdarrays. Apds differ from a photodiode in that they offer gain. To enhance the uv sensitivity, we initially made a test sample of a monolithic 2 2mm2 apd, the. Mcc ss8550c tm micro commercial components 20736 marilla street chatsworth micro commercial components ss8550d ca 911 phone. The s855002 is an apd avalanche photodiode array designed for short wavelength detection, featuring low noise and low. Hamamatsu, alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated. Featuresl high sensitivity and low noise in short wavelength regionl low terminal capacitancel optimized for blue light detectionl uniform gain and low crosstalk variation betweeneach.

Bandwidth versus gain for the the 20 mdiameter normal incident sige apd. The distribution of breakdown voltage across the area followed a radial pattern consistent with a. Frontend electronics for the ratcap mobile animal pet scanner, ieee transactions on nuclear science vol. The blue dash line shows a constant gainbandwidth product of 290ghz. The advantages of avalanche photodiode apd arrays in laserranging applications j. The advantages of avalanche photodiode apd arrays in laser.

S8550 02 near infrared type lowbias operation 600 to 800 800 s12023 series, etc. With its peak sensitivity around 840 nm and highspeed response 200 mhz, this device is suitable for distance measurement. First sensor apd array application note apd array with guard ring rev. The s855002 also offers uniform gain and small crosstalk between each element. Typically used in timeofflight tof sensors for distance measurement, for example in automotive safety sensing applications, linear apd arrays are now available from laser components. The array is pictured being fed an f5 beam, though it will actually see a gentler f20 beam.

Spatial information is preserved by the array, and may be used to perform realtime guiding on the return signal. Application of hamamatsu s8550 apd array to the common petct detector article pdf available in ieee transactions on nuclear science 555. The number of generated electrons internal gain increases with the reverse voltage. Sib216 sensor interface board apd array product sheet vertilon corporation has made every attempt to ensure that the information in this document is accurate and complete. The device allows stable operation at gains up to 74, with a detection efficiency of about 60% for photons of 420 nm wavelength. Vertilon offers sensor interface boards for the hamamatsu s8550 4 x 8 apd array and pacific silicon sensor 16 element linear apd array. Avalanche photodiodes apd first sensor develops and manufactures avalanche photodiodes in series covering a range of technologies. For applications utilizing multiple single element apds, the sds232 smb distribution system can be employed to provide a convenient means to connect up to 32 coaxial outputs to a photoniq. The advantages of avalanche photodiode apd arrays in. Avalanche photodiode array interface products vertilon. First sensor apd array application note apd array with.

Ss8550 datasheet, ss8550 pdf, ss8550 data sheet, ss8550 manual, ss8550 pdf, ss8550, datenblatt, electronics ss8550, alldatasheet, free, datasheet, datasheets, data. Ad2308 ad2309 ad23010 ad800 ad1200 ad1500 ad3000um. A 16channel avalanche photodiode detector array for. E absolute maximum rating ta25c, unless otherwise specified. Ss8550 pnp epitaxial silicon transistor absolute maximum ratings ta25c unless otherwise noted electrical characteristics ta25c unless otherwise noted hfeclassification symbol parameter ratings units vcbo collectorbase voltage 40 v vceo collectoremitter voltage 25 v vebo emitterbase voltage 6 v ic collector current 1. Us7759647b2 pet imaging system with apdbased pet detectors. Two silicon wafer parts, each of them comprising 16 apds, are housed in a ceramic package with a 0. Sib216 sensor interface board apd array product sheet description the sib216 sensor interface board sib provides the electrical and mechanical connectivity between a pacific silicon sensor adla169dil18 avalanche photodiode apd array and a vertilon photoniq multichannel pmt data acquisition system. Elektronische bauelemente ss8050 npn silicon general purpose transistor 26oct2009 rev.

Combining lownoise, highsensitivity silicon avalanche photodiodes in a monolithic assembly, the arrays have been optimized for the 800900 nm wavelength. Materials and processing can be adapted to individual customer and product requirements, thus enabling the optimization of parameters such as sensitivity at different wavelengths, speed and capacity. Hamamatsu s8550 apd arrays for highresolution scintillator. Products support hamamatsu s8550 8 x 4 apd array and first sensor. Ss8550 datasheet, equivalent, cross reference search. An excellent quantum efficiency qe of 55% was achieved at the peak emission of pr. S8550also offers uniform gain and small crosstalk between each element. Si535051 ordering guide1,2 part number i2c or pin frequency reference programmed. The s8550 02 is an apd avalanche photodiode array designed for short wavelength detection, featuring low noise and low terminal capacitance. Combining lownoise, highsensitivity silicon avalanche photodiodes in a monolithic assembly, the arrays have been optimized for the 800900 nm wavelength range. Description the utc s8550 is a low voltage high current small signal pnp 1 transistor, designed for class b pushpull audio amplifier and to92 general purpose applications. Vertilon corporation, 66 tadmuck road, westford, ma 01886 tel. Characterization of avalanche photodiode arrays for. Interface boards for avalanche photodiode arrays from hamamatsu and silicon sensor.

The sib332 apd array interface board provides the mechanical and electrical connectivity between the hamamatsu s8550 4 x 8 element apd array and external signal processing electronics such as vertilons photoniq multichannel data acquisition systems. The s855002 is an apd avalanche photodiode array designed for short wavelength detection, featuring low noise and low terminal capacitance. Parameter symbol ratings unit collectorbase voltage vcbo30 v collectoremitter voltage vceo20 v emitterbase voltage vebo5 v collector current ic700 ma. B s8550 pnp silicon transistor utc assumes no responsibility for. C page 1 of 2 any changes of specification will not. Silicon avalanche photodiodes are used in the wavelength range between 250 nm and 1100 nm. The performance of hamamatsu s8550 avalanche photodiode apd arrays for scintillator matrices readout has been evaluated. The s8550 is mounted to the bottom side of the sib332 through 34 socket pins that connect the. Although this is a primary advantage of apds, other characteristics that should also be considered when selecting a device are the operating wavelength, bandwidth, noise and signal handling capability of the device.

Uvenhanced apd array the apds described here hamamatsu s8550 0001x,0002x were developed based on the technology of the s8664 apd series reversetype. Therefore, dc input resistance of the transimpedance amplifier must not be gigaohmic as mos inputs usually are. The development of highresolution, uvenhanced avalanche photodiode apd arrays usable in highresolution pet imaging is underway. Our goal was to reduce the room temperature dark count rate below 1 khz while maintaining high. The array is configured with a dispersive grating to simultaneously record emission over a broad wavelength range using the 16 apd channels of the linear apd array.

In addition to our standard apds, versions featuring variable gain i. The s8550 02 also offers uniform gain and small crosstalk between each element. These apd arrays were specifically designed as photosensors capable of direct coupling with pixelized prdoped lu 3 al 5 o 12 pr. First sensor apd array application note apd array with guard ring. S855002 near infrared type lowbias operation 600 to 800 800 s12023 series, etc. The development and performance of uvenhanced apdarrays for. The inset shows the impulse response of the apd with a fwhm of 30ps. Pdf application of hamamatsu s8550 apd array to the common. For applications utilizing multiple single element apds, the sds232 smb distribution system can be employed to provide a convenient means to connect up to 32 coaxial outputs to a photoniq please refer to the selection guide below or contact contact us if.